Research Staff Member-MRAM

Company: IBM Corporation
Location: Yorktown Heights, New York, United States
Type: Full-time
Posted: 31.JUL.2021
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Summary

Introduction IBM Research Scientists are charting the future of Artificial Intelligence, creating breakthroughs in quantum computing, disco...

Description

Introduction

IBM Research Scientists are charting the future of Artificial Intelligence, creating breakthroughs in quantum computing, discovering how blockchain will reshape the enterprise, and much more. Join a team that is dedicated to applying science to some of today's most complex challenges, whether it's discovering a new way for doctors to help patients, teaming with environmentalists to clean up our waterways or enabling retailers to personalize customer service.

Your Role and Responsibilities

IBM's MRAM (Magnetoresistive Random Access Memory) Materials and Devices group in Yorktown Heights, NY is seeking a Materials Scientist.

You will lead independent research on developing improved magnetic tunnel junction stack materials for Spin-Transfer Torque MRAM (STT-MRAM). You will grow and characterize blanket film stacks with novel materials, and interpret and understand the blanket film data, including current-in-plane tunneling (CIPT), vibrating sample magnetometer (VSM) data and structural characterizations. You will then select candidate stacks and work with colleagues to initiate experiments to obtain patterned device data, and interpret and understand the device data.

You should have a proven track record of innovation and demonstrated interest in technology development. This work will be done in conjunction with a diversely skilled team, so demonstrated collaboration and communication skills are essential.

PhD in Materials Science, Engineering, Physics or a related area is required.

Required Technical and Professional Expertise

* 3 years experience in materials science, physics, electrical engineering or a related field
* Ability to work independently

Preferred Technical and Professional Expertise

* 3 years magnetic tunnel junction growth and characterization
* 3 years MRAM experience
* 3 years spin-transfer torque device physic
* Proven verbal and written communication skills

 
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