IBM Research Scientists are charting the future of Artificial Intelligence, creating breakthroughs in quantum computing, disco...
IBM Research Scientists are charting the future of Artificial Intelligence, creating breakthroughs in quantum computing, discovering how blockchain will reshape the enterprise, and much more. Join a team that is dedicated to applying science to some of today's most complex challenges, whether it's discovering a new way for doctors to help patients, teaming with environmentalists to clean up our waterways or enabling retailers to personalize customer service.
Your Role and Responsibilities
IBM is seeking a Test/Device expert to work as a Research Scientist at its T. J. Watson Research Center in Yorktown Heights, NY.
This position involves developing a comprehensive understanding and generating new device concepts for Magnetoresistive Random Access Memory (MRAM). Your work will involve providing device feedback to materials and integration teams through standard and customized tests, and generating new ideas to advance MRAM technology. You should be an independent, self-driven, innovative, hands-on experimentalist with a proven track record of achievement. The work will be done in conjunction with a diversely skilled team, so demonstrated collaboration and communication skills are also essential.
PhD degree in Physics, Electrical Engineering, Materials Sciences or a related field is preferred.
Required Technical and Professional Expertise
* 3 years experience in magnetic device testing/characterization
* Ability to work independently
Preferred Technical and Professional Expertise
* 3 years experience in spin-transfer torque device physics
* 3 years experience in MRAM
* Experience with test code development
* Proven communication skills